ntgd4161p power mosfet ?30 v, ?2.3 a, dual p?channel, tsop?6 features ? fast switching speed ? low gate charge ? low r ds(on) ? independently connected devices to provide design flexibility ? this is a pb?free device applications ? load switch ? battery protection ? portable devices like pdas, cellular phones and hard drives maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source voltage v dss ?30 v gate?to?source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d ?2.1 a t a = 85 c ?1.5 t 5 s t a = 25 c ?2.3 power dissipation (note 1) steady state t a = 25 c p d 1.1 w t 5 s 1.3 continuous drain current (note 2) steady state t a = 25 c i d ?1.5 a t a = 85 c ?1.1 power dissipation (note 2) t a = 25 c p d 0.6 w pulsed drain current t p =10 s i dm ?10 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s ?0.8 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r ja 115 c/w junction?to?ambient ? steady state (note 2) 225 junction?to?ambient ? t 5 s (note 1) 95 junction?to?case ? steady state (note 1) r jc 40 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. when surface mounted to an fr4 board using 1 in. pad size (cu. area = 1.2 in 2 [1 oz] including traces) 2. when surface mounted to an fr4 board using minimum recommended pad size (cu. area = 0.047 in 2 ) d1 g1 s1 device package shipping ? ordering information NTGD4161PT1G tsop?6 (pb?free) 3000 / tape & ree l p?channel (mosfet1) tsop?6 case 318g style 13 s8 = specific device code m = date code* = pb?free package marking diagram ?30 v 160 m @ ?10 v r ds(on) max v (br)dss ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. s8 m d2 g2 s2 p?channel (mosfet2) d1 g1 s1 s2 d2 g2 280 m @ ?4.5 v 1 (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?30 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 22 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?24 v t j = 25 c ?1.0 a t j = 125 c ?10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?1.0 ?1.9 ?3.0 v gate threshold temperature coefficient v gs(th) /t j ?4.7 mv/ c drain?to?source on resistance r ds(on) v gs = ?10 v, i d = ?2.1 a 105 160 m v gs = ?4.5 v, i d = ?1.6 a 190 280 forward transconductance g fs v ds = ?5.0 v, i d = ?2.1 a 2.7 s charges and capacitances input capacitance c iss v ds = ?15 v, f = 1.0 mhz, v gs = 0 v 281 pf output capacitance c oss 50 reverse transfer capacitance c rss 28 total gate charge q g(tot) v gs = ?10 v, v ds = ?5.0 v, i d = ?2.1a 5.6 7.1 nc threshold gate charge q g(th) 0.65 gate?to?source charge q gs 1.2 gate?to?drain charge q gd 0.90 switching characteristics (note 4) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?15 v, i d = ?1.0 a, r g = 6.0 7.6 14 ns rise time t r 9.2 23 turn?off delay time t d(off) 12.5 20 fall time t f 4.5 12 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?0.8 a t j = 25 c ?0.79 ?1.2 v t j = 125 c ?0.65 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = ?0.8 a 8.0 ns charge time t a 5.7 discharge time t b 2.3 reverse recovery charge q rr 3 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 ntgd4161p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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